 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SFH 2801 Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 2801 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Si-PIN Fotodiode q Niedrige Sperrschicht- und GehauseKapazitaten q Kurze Schaltzeit q Niedriger Dunkelstrom q Kathode galvanisch getrennt vom Gehause Anwendungen q Optischer Sensor mit groer ModulationsBandbreite q Datenubertragung bis zu 565 Mbit/s Features q Si-PIN-photodiode q Low junction and low package capacitance q Fast switching times q Low dark current q Cathode electrically isolated from case Applications q Optical sensor of high modulation bandwidth q Data communication up to 565 Mbit/s Typ Type SFH 2801 Bestellnummer Ordering Code Q62702-P3018 Stecker/Flansch Connector/Flange TO-18, planes Glasfenster, hermetisch dichtes Gehause, Lotanschlusse im 2.54 mm Raster (1/10") TO-18, plane glass window, hermetically sealed package solder tabs lead spacing 2.54 mm (1/10") Semiconductor Group 1 1998-10-06 fmx06406 SFH 2801 Grenzwerte Maximum Ratings Bezeichnung Description Sperrspannung Reverse voltage Isolationsspannung zum Gehause Isolation voltage to case Betriebs- und Lagertemperaturbereich Operating and storage temperature range Lottemperatur (Wellen-/Tauchlotung) (Lotstelle 2 mm von Bodenplatte entfernt bei Lotzeit t 10 s) Soldering temperature (wave/dip soldering) in 2 mm distance from base plate (t 10 s) Symbol Symbol Wert Value 50 100 - 40 ... + 125 260 Einheit Unit V V C C VR VIS Top; Tstg TS Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektrale Fotoempfindlichkeit Spectral sensitivity = 850 nm = 950 nm Anstiegs- und Abfallzeit Rise and fall time RL = 50 , VR = 50 V, = 850 nm Sperrschicht-Kapazitat bei f = 1 MHz Junction capacitance at f = 1 MHz VR = 0 V VR = 1 V VR = 12 V VR = 20 V Dunkelstrom Dark current VR = 20 V, E = 0 Symbol Symbol S max 850 Wert Value Einheit Unit nm S850 S950 ti; tf 0.55 ( 0.45) 0.45 1 A/W A/W ns C0 C1 C12 C20 ID 13 7 3.3 3 1 ( 5) pF pF pF pF nA Semiconductor Group 2 1998-10-06 SFH 2801 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Description Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 20 V, = 850 nm Nachweisgrenze Detection limit VR = 20 V, = 850 nm Temperaturkoeffizient von IP Temperature coefficient of IP Isolationsstrom Isolation current VIS = 100 V Symbol Symbol Wert Value 3.3 x 10- 14 Einheit Unit W Hz cm * Hz W %/K nA NEP D* 3.1 x 1012 TC I18 0.2 0.1 ( 1) Semiconductor Group 3 1998-10-06 SFH 2801 Relative spectral sensitivity S = f () OHF00460 Photocurrent IP = f (E) 10 2 A OHF00462 S rel 100 % 90 80 P 10 1 70 60 50 40 30 10 0 10 -1 20 10 0 400 600 800 nm 1000 L 10 -2 10 -3 10 -2 10 -1 mW/cm2 E 10 1 Dark current IR = f (VR) 10 2 nA 10 1 OHF00463 Dark current IR = f(TA) E = 0, VR = 20 V 10 3 nA 10 2 OHF00464 R R 10 1 10 0 10 0 10 -1 10 -1 10 -2 10 -2 10 -3 0 10 20 30 40 V 50 VR 10 -3 -50 -25 0 25 50 75 C 100 TA Semiconductor Group 4 1998-10-06 SFH 2801 Dark current IR = f(VR) 10 5 nA 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 OHF00465 Junction capacity C = f(VR) E = 0, f = 1 MHz 12 pF 10 100 C 75 C 50 C 25 C OHF00466 R 125 C C 8 6 4 0 C -10 C 2 10 -3 0 10 20 V VR 30 0 -1 10 10 0 10 1 V 10 2 VR Semiconductor Group 5 1998-10-06 |
Price & Availability of SFH2801
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |